Semiconductor switching devices achieve high power densities either in standalone or hybrid modules. SiC power modules - All SiC and hybrid modules
Other applications include signal conditioning and switching. Their fast switching speeds and low voltage operation makes them suitable for TTL and CMOS logic gates. The SiC Schottky diodes deliver better power conversion compared to the silicon devices and are, therefore, more suitable for electric vehicle charging stations, battery chargers, solar power systems, hybrid power storage systems, and more. Some of the diodes have junction barrier Schottky (JBS) structures that ensure very low leakage currents and ability to handle high surge currents - which are necessary properties for switched-mode power supply systems. Other properties include better surge current handling capability, less EMI during switching operations, a stable switching behavior independent of the temperature, and more. Generally, the SiC SBDs have higher forward current capacities and low forward voltage drops over their operating temperature range.Īlso, the SiC Schottky barrier diodes have higher reverse voltage ratings, short reverse recovery time, and low switching losses. Generally, the wide gap semiconductors are suitable for the high power densities applications, low consumption high operational voltage applications as well as high RF output applications in wireless communications.Ĭurrent and potential applications include power systems in the automotive, airplane, traction drives, industrial drives, induction heating, server power supplies, battery chargers, inverters, etc.Ĭompared to the Si counterparts, the SiC Schottky Barrier Diodes (SBDs) have superior electrical and thermal conductivity. Their semiconductor material and construction process enable them to support a combination of high voltage and fast switching operations that traditional power transistors cannot achieve. SIC MOSFETs are suitable for a wide range of electronics power system switching applications. The high power density devices have simple designs that require fewer and smaller sized external components. In particular, the device is reliable, energy-efficient, rugged and able to support higher switching frequencies and operating voltages. Today, the SiC MOSFET device is attracting a lot of attention and slowly replacing the IGBT because of its superior overall performance. These range from low ON resistance and switching losses to better thermal conductivity and high figure of merit. SiC MOSFET is a revolutionary power device that has several benefits over traditional silicon equivalent.
For example, the SiC MOSFET still has the gate, drain, and source terminals. The devices often share the same nomenclature as the Si equivalents. Generally, the common SiC power devices are the SiC MOSFET and SiC Schottky diode as well as hybrid and All SiC power modules. SiC devices are more reliable, have a longer service life and ability to withstand harsh environments.Ability to operate and withstand higher junction operating temperatures reduces cooling requirements, costs, and complexity.High current capacity reduces circuit components, cost, and complexity.This makes them suitable for automotive, aerospace, military, and other sensitive and demanding applications in harsh environments. SiC components have higher energy bandgaps which make them stronger to withstand the effects of heat, radiation, strong electromagnetic fields and other factors that affect stability and performance.
#Density of silicon series
For this reason, only a few series devices are required in high voltage applications and this reduces costs and circuit complexity. Ability to withstand high voltages of about 10 times what traditional silicon can handle.
The high operating frequencies allow the use of smaller passive components such as the capacitors and inductors. These SiC devices have benefits such as better power efficiency, reduced losses and energy savings hence lower operating costs and environmental damage.ĭue to their higher power density, the devices are smaller in physical size and this translates to space and weight savings.
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